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HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
Features
Saturated Output Power: +37 dBm @ 23% PAE High Output IP3: +44.5 dBm High Gain: 28 dB DC Supply: +7V @ 2400 mA No External Matching Required Die Size: 3.24 x 4.5 x 0.1 mm
Typical Applications
The HMC950 is ideal for: * Point-to-Point Radios
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AMPLIFIERS - LINEAR & POWER - CHIP
* Point-to-Multi-Point Radios * VSAT & SATCOM * Military & Space
Functional Diagram
General Description
The HMC950 is a four stage GaAs pHEMT MMIC 4 Watt Power Amplifier which operates between 12 and 16 GHz. The HMC950 provides 28 dB of gain, +37 dBm of saturated output power, and 23% PAE from a +7V power supply. The HMC950 exhibits excellent linearity and is optimized for high capacity point to point and point to multi-point radio systems. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length.
Electrical Specifications, TA = +25 C
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3)[2] Total Supply Current (Idd)
Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = Vdd6 = Vdd7 = Vdd8 = +7V, Idd = 2400mA [1]
Min. Typ. 12 - 13 26 28 0.056 17 17 34.5 36.5 37 43 2400 34.5 26 Max. Min. Typ. 13 - 16 28 0.056 16 17 36.5 37 44.5 2400 Max. Units GHz dB dB/ C dB dB dBm dBm dBm mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 2400 mA typical. [2] Measurement taken at +7V @ 2400 mA, Pout / Tone = +24 dBm
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
Gain vs. Temperature
36
Broadband Gain & Return Loss vs. Frequency
40 30 RESPONSE (dB) 20
32
S21 S11 S22
GAIN (dB)
10 0 -10 -20 -30 10 11 12
28
3
+25C +85C -55C
24
20
16 13 14 15 FREQUENCY (GHz) 16 17 18 11 12 13 14 15 16 17 FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C +85C -55C
Output Return Loss vs. Temperature
0 -4 RETURN LOSS (dB) -8 -12 -16 -20 -24
+25C +85C -55C
-4 RETURN LOSS (dB)
-8
-12
-16
-20 11 12 13 14 15 16 17 FREQUENCY (GHz)
11
12
13
14
15
16
17
FREQUENCY (GHz)
P1dB vs. Temperature
42
+25C +85C -55C
P1dB vs. Supply Voltage
42
5V 6V 7V
40 P1dB (dBm)
40 P1dB (dBm)
38
38
36
36
34
34
32 12 13 14 FREQUENCY (GHz) 15 16
32 12 13 14 FREQUENCY (GHz) 15 16
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
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AMPLIFIERS - LINEAR & POWER - CHIP
HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
Psat vs. Supply Voltage
42
Psat vs. Temperature
42
+25C +85C -55C
P1dB (dBm)
38
P1dB (dBm)
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AMPLIFIERS - LINEAR & POWER - CHIP
40
40
5V 6V 7V
38
36
36
34
34
32 12 13 14 FREQUENCY (GHz) 15 16
32 12 13 14 FREQUENCY (GHz) 15 16
P1dB vs. Supply Current (Idd)
42 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16
1600mA 1800mA 2000mA 2200mA 2400mA
Psat vs. Supply Current (Idd)
42 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16
1600mA 1800mA 2000mA 2200mA 2400mA
P1dB (dBm)
Output IP3 vs. Temperature, Pout/Tone = +24 dBm
55
+25C +85C -55C
Output IP3 vs. Supply Current, Pout/Tone = +24 dBm
55
1600mA 1800mA 2000mA 2200mA 2400mA
50 IP3 (dBm) IP3 (dBm) 12 13 14 FREQUENCY (GHz) 15 16
P1dB (dBm)
50
45
45
40
40
35
35 12 13 14 FREQUENCY (GHz) 15 16
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
Output IM3 @ Vdd = +5V
80 70
Output IP3 vs. Supply Voltage, Pout/Tone = +24 dBm
55
50 IP3 (dBm)
45
IM3 (dBc)
5V 6V 7V
60 50 40 30 20 10
12.5 GHz 13.5 GHz 14.5 GHz 15.5 GHz
3
10 12 14 16 18 20 22 24 26 28
40
35 12 13 14 FREQUENCY (GHz) 15 16
0 Pout/TONE (dBm)
Output IM3 @ Vdd = +6V
80 70 60 IM3 (dBc)
Output IM3 @ Vdd = +7V
80 70 60 IM3 (dBc) 50 40 30 20 10 0
12.5 GHz 13.5 GHz 14.5 GHz 15.5 GHz
50 40 30 20 10 0 10 12 14 16 18 20 22 24 26 28 Pout/TONE (dBm)
12.5 GHz 13.5 GHz 14.5 GHz 15.5 GHz
10
12
14
16
18
20
22
24
26
28
Pout/TONE (dBm)
Power Compression @ 14 GHz
40 Pout (dBm), GAIN (dB), PAE (%) 35 30 25 20 15 10 5 0 -12
Pout Gain PAE
Reverse Isolation vs. Temperature
0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80
+25C +85C -55C
-9
-6
-3
0
3
6
9
12
15
16
18
20 FREQUENCY (GHz)
22
24
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
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AMPLIFIERS - LINEAR & POWER - CHIP
HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
Gain & Power vs. Supply Voltage @ 14 GHz
50 Gain (dB), P1dB (dBm), Psat (dBm) 45 40 35 30 25 20
Gain & Power vs. Supply Current @ 14 GHz
50 Gain (dB), P1dB (dBm), Psat (dBm) 45 40 35 30 25 20 1600
Gain P1dB Psat
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AMPLIFIERS - LINEAR & POWER - CHIP
Gain P1dB Psat
1800
2000 Idd (mA)
2200
2400
5
5.5
6 Vdd (V)
6.5
7
Power Dissipation
20 18 POWER DISSIPATION (W) 16 14 12 10 8 6 4 2 0 -12 -9 -6 -3 0 3 6 9 12 15
12 GHz 13 GHz 14 GHz 15 GHz 16 GHz
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) RF Input Power (RFIN) Channel Temperature Continuous Pdiss (T= 85 C) (derate 275 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +8V +27 dBm 150 C 17.9 W 3.63 C/W -65 to +150 C -55 to +85 C
Typical Supply Current vs. Vdd
Vdd (V) +5.0 +6.0 +7.0 Idd (mA) 2400 2400 2400
Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 2400 mA at +7V
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
Outline Drawing
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AMPLIFIERS - LINEAR & POWER - CHIP
Die Packaging Information
Standard GP-1
[1]
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND PAD IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE .002
Alternate [2]
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
Pad Descriptions
Pad Number 1 Function RFIN Description This pad is DC coupled and matched to 50 Ohms over the operating frequency range. Interface Schematic
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AMPLIFIERS - LINEAR & POWER - CHIP
2, 12
Vgg1
Gate control for amplifier. External bypass capacitors of 100 pF, 0.01 F and 4.7 F are required. The pads are connected on chip.
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Vdd1, Vdd2, Vdd3, Vdd4 Vdd5, Vdd6, Vdd7, Vdd8 RFOUT
8 - 11
Drain bias voltage for the amplifier. External bypass capacitors of 100 pF are required for each pad, followed by common 0.1 F capacitors.
7
This pad is DC coupled and matched to 50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Application Circuit
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
Assembly Diagram
3
AMPLIFIERS - LINEAR & POWER - CHIP
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
3-8
HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
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AMPLIFIERS - LINEAR & POWER - CHIP
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC950
v01.1010
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
Notes:
3
AMPLIFIERS - LINEAR & POWER - CHIP
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
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